TYPE | DESCRIPTION |
Mfr | Toshiba Electronic Devices and Storage Corporation |
Series | - |
Package | Bulk |
Product Status | OBSOLETE |
Package / Case | TO-226-3, TO-92-3 Long Body |
Mounting Type | Through Hole |
Transistor Type | NPN |
Operating Temperature | 150°C (TJ) |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
Supplier Device Package | TO-92MOD |
Current - Collector (Ic) (Max) | 2 A |
Voltage - Collector Emitter Breakdown (Max) | 120 V |
Power - Max | 900 mW |