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| TYPE | DESCRIPTION |
| Mfr | GE Aerospace |
| Series | SiC Power |
| Package | Box |
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 475A |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
| Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 29300pF @ 600V |
| Power - Max | 1250W |
| Operating Temperature | -55°C ~ 150°C (Tc) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Base Product Number | GE12047 |
